发明名称 ELECTRON BEAM SYSTEM, METHOD FOR INSPECTING DEFECT, AND METHOD FOR MANUFACTURING DEVICE USING THE SYSTEM AND THE METHOD
摘要 PROBLEM TO BE SOLVED: To measure the potential contrast with a high throughput by using a retarding field type objective lens. SOLUTION: This electron beam system converges a primary electron beam from electron guns 1, 2 and 3 to scan it on a sample 15, and detects secondary electron beams emitted from the sample 15 to evaluate the sample 15. This electron beam system has the retarding field type objective lens 14 as an objective lens. The lower electrode of the retarding field type objective lens 14 is an axially symmetry electrode 20 arranged in the region close to a light axis adjacently to the sample 15. When SEM images are needed, a relatively large voltage is applied to the axially symmetry electrode 20 from a power source 16. When potential contrast images are needed, a lower voltage 18 than that of the sample 15 is applied to the axially symmetry electrode 20 by switching a changing-over switch 17. When potential contrast images are needed, vector scanning is selectively performed.
申请公布号 JP2003132832(A) 申请公布日期 2003.05.09
申请号 JP20010330672 申请日期 2001.10.29
申请人 EBARA CORP 发明人 NAKASUJI MAMORU;KATO TAKAO;SATAKE TORU;NOMICHI SHINJI
分类号 H01L21/66;H01J37/28;H01L21/027;(IPC1-7):H01J37/28 主分类号 H01L21/66
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