NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR OPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device having a long life for lasing. SOLUTION: The semiconductor laser device comprises a nitride semiconductor substrate and a nitride semiconductor layer formed on the substrate. The substrate comprises a dislocation concentrated region of the stripe geometry and a low dislocation region of the stripe geometry which is the other region than the dislocation concentrated region, with the nitride semiconductor layer including a laser beam guide region of the stripe geometry. The laser beam guide region is provided above the low dislocation region and is nearly parallel with the dislocation concentrated region. The distance in the horizontal direction between the laser beam guide region and part of the dislocation concentrated region which is closest to the laser beam guide region is at least 40μm.