POLISHING MATERIAL, CMP SLURRY COMPOSITION, FORMING METHOD OF RTN PATTERN, MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve the polishing speed of RTN even under low polishing pressure. SOLUTION: A slurry composition for CMP for polishing a ruthenium titanium nitride thin film and including a polishing material contains diammonium nitrate cerium (IV) and a strongly acidic solution. A content of diammonium nitrate cerium (IV) is 1-10 wt.% with reference to the total weight of slurry. The polishing speed of the ruthenium titanium nitride thin film can be improved even under the low polishing pressure by performing chemical mechanical polishing process by using slurry. Furthermore, the chemical mechanical polishing process is promoted only by a one-stage process by using one kind of the slurry, defect on an insulating film is decreased, and since polishing characteristics can be improved, the chemical mechanical polishing process can be simplified.