| 摘要 |
<p>PROBLEM TO BE SOLVED: To miniaturize a semiconductor device containing power transistors and SBD (Schottky barrier diode) elements. SOLUTION: This semiconductor device is constituted as follows: The main surface of a semiconductor substrate has first and second regions. A plurality of first and second conductors are formed on each of the first and second regions. A first semiconductor region, and a second semiconductor region located in the first semiconductor region and having an opposite conductivity type to that of the first semiconductor region, are formed between adjacent first conductors in the first region. A third semiconductor region having the same conductivity type as that of the second semiconductor region and having a lower impurity concentration than that of the second semiconductor region is formed between adjacent second conductors in the second region. Metal is formed on the second region of the semiconductor substrate. The third semiconductor region has a metal contact that is connected to the metal, while the metal is electrically connected to the second semiconductor region. The distance between centers of the adjacent first conductors in the first region is shorter than that between centers of the adjacent second conductors in the second region.</p> |
