METHOD AND APPARATUS FOR DEPOSITING SILICON CARBIDE THIN FILM

摘要

PURPOSE: A chemical vapor deposition apparatus capable of forming a deposition film of high quality on the surface of an object to be deposited such as substrate, and a process method for growing a single crystalline thin film of high quality are provided. CONSTITUTION: In an ordinary thin film deposition method for depositing a silicon carbide single crystalline thin film on the surface of an object to be deposited by reaction of silane and propane gases, the silicon carbide thin film deposition method is characterized in that a silicon carbide single crystalline thin film is deposited on the surface of the object to be deposited by reaction of the raw materials with bis-trimethylsilyl methane (Si2C7H2O) that is an organic compound, wherein bubbled hydrogen is reacted with bis-trimethylsilyl methane (Si2C7H2O) to smoothen deposition of the bis-trimethylsilyl methane (Si2C7H2O), a 3C-SiC single crystalline thin film is deposited on a substrate of the object to be deposited at a low temperature of 1100 deg.C using the bis-trimethylsilyl methane (Si2C7H2O), a single crystalline thin film is deposited on a 4H-SiC substrate to a low temperature of 1350 deg.C using the bis-trimethylsilyl methane (Si2C7H2O), and a single crystalline thin film is deposited on a 6H-SiC substrate to a low temperature of 1350 deg.C using the bis-trimethylsilyl methane (Si2C7H2O). In a deposition apparatus for depositing a silicon carbide single crystalline thin film on the surface of an object to be deposited by reaction of raw materials with bis-trimethylsilyl methane (Si2C7H2O) that is an organic compound, the apparatus for depositing a silicon carbide thin film comprises a thermostat for containing water to constantly maintaining vapor pressure during reaction of the bis-trimethylsilyl methane (Si2C7H2O).