发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING MONITORING CIRCUIT
摘要 PURPOSE: A semiconductor memory device having a monitoring circuit is provided to measure a device characteristic by using a dummy word line and a dummy bit line. CONSTITUTION: A dummy word line is connected with a dummy cell. A dummy bit line is connected with the dummy cell. A dummy word line driver(10) is used for driving the dummy word line. A dummy bit line sense amplifier(20) is used for amplifying data loaded on the dummy bit line. The first comparison portion(30A) compares the voltage applied to the dummy word line with the first reference voltage. The second comparison portion(30B) compares the voltage applied to the dummy bit line with the second reference voltage. The third comparison portion(30C) compares the voltage applied to the dummy bit line with the third reference voltage. A control circuit(40) is used for generating a plurality of control signals to control the voltages of the dummy word line and the dummy bit line.
申请公布号 KR20030035711(A) 申请公布日期 2003.05.09
申请号 KR20010068131 申请日期 2001.11.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JONG HUN
分类号 G01R31/28;G01R31/3185;G11C8/08;G11C8/14;G11C11/407;G11C29/02;H01L21/66;(IPC1-7):G11C8/08 主分类号 G01R31/28
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