| 摘要 |
PROBLEM TO BE SOLVED: To improve the radial profile of plasma density on the surface of a wafer. SOLUTION: A double-electrode wafer holder comprise a central electrode 2 to which an rf current is supplied from an rf power supply 8, a thin dielectric ring member 3 disposed around a sidewall of the central electrode, an outside electrode 4 disposed around the thin dielectric ring member, a dielectric plate 5, in which the outside electrode obtains part of the rf current provided to the central electrode by a capacitive coupling mechanism through the thin dielectric ring member, and which covers the upper surface of the outside electrode, and dielectric members 6a, 6b which cover a side surface and the lower surface of the outside electrode, and the lower surface of the central electrode. |
