发明名称 GaN BASED SEMICONDUCTOR LIGHT EMITTING DIODE
摘要 PROBLEM TO BE SOLVED: To provide a GaN based LED provided with an upper electrode capable of passing more light to the outside than a conventional upper electrode. SOLUTION: The upper electrode P2 is subdivided and formed so as to be provided with light transmissivity. At a subdivided part P22, the electrode is subdivided so as to present a net shape or a branched shape and turned to a part spread on the top surface 4a of an element structure and the top surface is exposed between the subdivided electrodes. As for the degree of subdivision, when the division is performed in a matrix shape with a square whose one side is 50 μm as a constitution unit, an electrode part and an exposed part are similarly present within each constituting unit and it is preferable that the ratio of an area of the electrode part occupying in each constitution unit is 30%-80%.
申请公布号 JP2003133589(A) 申请公布日期 2003.05.09
申请号 JP20010324858 申请日期 2001.10.23
申请人 MITSUBISHI CABLE IND LTD 发明人 TSUNEKAWA TAKASHI;TADATOMO KAZUYUKI;OKAGAWA HIROAKI;OUCHI YOICHIRO
分类号 H01L33/32;H01L33/38;H01L33/42 主分类号 H01L33/32
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