| 摘要 |
PROBLEM TO BE SOLVED: To provide a phototransistor capable of simultaneously improving a tendency for an increase in sensitivity and a decrease in a residual image. SOLUTION: An N<+> type collector embedded layer 2 is formed on a silicon substrate 1 and after an N<-> type epitaxial layer 3 is caused to grow, an N<+> type collector layer 4 is formed. Next, a P<+> type base layer 5 to effect the amplification function and photoelectric transfer of a transistor is formed and an N<+> type emitter layer 6 is formed thereon. Consecutively, after an oxidation film 7 and a wiring film 9 of an aluminum film are formed, a protection film 10 is formed on a whole surface. Thereafter, a photoconduction film 12 is formed to form a photoelectric conversion region. The photoconduction film 12 and the base layer 5 are electrically interconnected through an oxide film opening part 8 and a protection film opening part 11. By separating a function to convert optical information into an electric signal and an amplifying function, CBC is decreased in size by reducing a base region, and high sensitivity and low residual image can be attained by widening the photoconduction film 12.
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