INTERNAL SUPPLY VOLTAGE GENERATION CIRCUIT USED FOR HIGH-SPEED SEMICONDUCTOR DEVICE AND METHOD FOR GENERATING INTERNAL SUPPLY VOLTAGE THEREOF

摘要

PURPOSE: An internal supply voltage generation circuit used for a high-speed semiconductor device and a method for generating an internal supply voltage thereof are provided to enhance an operating speed by preventing the internal supply voltage drop in a low voltage region. CONSTITUTION: A comparison circuit is formed with PMOS transistors(P1,P2) and NMOS transistors(N1,N2,N3) in order to compare a reference voltage and an output voltage(PIVC). A level compensation portion(P3) boosts an output voltage level from a reference voltage level to an external supply voltage level in response to a compared level of the comparison circuit. A drop prevention portion(P4) receives the external supply voltage and prevents the output voltage drop in response to a detection signal of a supply voltage region. The drop prevention portion(P4) is operated independently of the comparison circuit and the level compensation portion(P3) by the external supply voltage.