| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory provided with a data sense circuit being preferable when a memory cell of a current readout type is used. SOLUTION: A semiconductor memory is provided with a memory cell array (1), a reference current generating circuit (DMC) generating a reference current (Iref), a reference potential generating circuit (6) generating a reference potential at a reference node (RSN) based on the reference current (Iref) generated by the reference current generating circuit, a first sense circuit (4a) generating an output current based on a cell current (Icell) of a selected memory cell and generating a data potential at a sense node (SN) based on this output current and the reference current, and a second sense circuit (4b) comparing a data potential of the sense node with the reference potential of the reference node and detecting data held by the selected memory cell. |
