CAPACITOR ELEMENT AND ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a capacitor element which can prevent film peeling in an interface between an upper electrode and a capacitor dielectric film caused by heat treatment and deterioration of capacitor characteristics, its manufacturing method and a manufacturing method of a semiconductor device having such a capacitor element. SOLUTION: A manufacturing method of a capacitor element has a process for forming a lower electrode formed of metal on a substrate, a process for forming a capacitor dielectric film formed of an oxide dielectric film on the lower electrode, a process for depositing a metallic film on a capacitor dielectric film, and a process for forming an upper electrode formed of a metallic film by patterning a metallic film. Heat treatment is carried out after deposition of a metallic film in an atmosphere containing hydrogen before patterning a metallic film. Consequently, it is possible to raise adhesion between an upper electrode and a capacitor dielectric film and to improve capacitor characteristics.