| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for bump bonding, capable of effectively controlling the progress of metal diffusion between formed bumps and electrode pads and surely preventing failures in the gold wire tear-off process after bump formation, by enabling local heating of very small spots on the semiconductor wafer. SOLUTION: The method has a process where a bonding ball 23, later to develop into a bump 27, is formed at the tip of a bump-forming material 9 led out of a bonding tool 10, a process where an electrode section 24, situated on an IC chip 18 on a semiconductor wafer 28 fixed immovable on a bonding stage 33 which is not provided with a heating source, is heated by irradiation of a laser beam L, and a process where ultrasonic vibration is applied with the bonding ball 23 pressed to the heated electrode section 24 to be subjected to metal bonding of the bonding ball 23 to the electrode section 24 for the formation of a bump 27. |
