发明名称 SPUTTERING METHOD
摘要 PURPOSE: To provide a technique of continuously performing sputtering. CONSTITUTION: During a film is formed on the surface of a substrate 5a held by a holding plate 12 by keeping the holding plate 12 inside a treatment chamber in an erected position and sputtering a target 26, an untreated substrate 5b is mounted on the hand 43 of a substrate conveying robot in a conveying chamber, the pressure in the conveying chamber is adjusted to a value substantially equal to the pressure in the treatment chamber, and the substrate 5b is conveyed into the treatment chamber and is mounted on the holding plate 12 kept in a horizontal position. The conveying time does not add any additional time because the untreated substrate can be conveyed into the treatment chamber during sputtering.
申请公布号 KR20030035942(A) 申请公布日期 2003.05.09
申请号 KR20020065199 申请日期 2002.10.24
申请人 ULVAC, INC. 发明人 MATSUDAI MASASUKE;SHISHIKURA MASATO;OOZORA HIROKI
分类号 B65G49/00;B65G49/07;C23C14/22;C23C14/34;C23C14/56;H01L21/677;H01L21/68;(IPC1-7):C23C14/34 主分类号 B65G49/00
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