| 摘要 |
PURPOSE: A method for fabricating a transistor including a silicon-germanium(Si- Ge) channel is provided to improve resistance characteristic of source and drain, minimize thermal diffusion of germanium ions, and form the Si-Ge channel exactly by the predetermined length. CONSTITUTION: A Si-Ge channel layer is formed on the active region of a Silicon- On-Insulator(SOI) wafer, consisting of a semiconductor layer(1) and a buried oxide layer(2) by epitaxial growth or ion implementation method. A gate oxide layer is grown on the whole surface of the semiconductor layer and then gate material is deposited on the resultant structure. The gate oxide layer and gate material is over-etched to form a Si-Ge channel(4), when a gate(6) and gate oxide layer pattern(5) are also formed. Source and drain region(7) are formed on the predetermined area by ion implementation and then expitaxially grown to form a source and drain epitaxial layer(8). An insulating layer(9) is formed on the sidewall of the gate. An insulation oxide layer(10) is formed between electrodes formed in contact holes, which are made to expose the gate and source/drain epitaxial layer.
|
