| 摘要 |
PROBLEM TO BE SOLVED: To improve manufacturing yield and to provide a semiconductor light emitting element of high quality and high reliability by obtaining an inverse pyramid structure more stably than before. SOLUTION: A plurality of long-length projections s are arrayed on a substrate 1 so as to turn respective side faces to an inverse mesa shape and a one-conductivity type semiconductor layer 2 and an opposite-conductivity type semiconductor layer 3 are successively stacked on the substrate 1 at each long- length projection s. Then, a connection member p connected to respective ends of a plurality of the long-length projections s is provided. The connection member p is composed by successively stacking the one-conductivity type semiconductor layer 2 and the opposite-conductivity type semiconductor layer 3 and one electrode 4 is formed over the respective opposite-conductivity type semiconductor layers 3 of the long-length projections s and the connection member p. Also, the other electrode 5 is formed on a back surface of the substrate 1. |
