READ-OUT METHOD AND READ-OUT CIRCUIT FOR FERROELECTRIC MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To enable securing wide read-out margin and performing stable read- out even if quantity of polarization of a ferroelectric capacitor is reduced. SOLUTION: In procedure of reading out data written in a ferroelectric capacitor CFe of a ferroelectric memory cell MFe, first voltage for increasing quantity of polarization of the ferroelectric capacitor CFe is applied to the ferroelectric capacitor CFe, after that, a series of read-out voltage for inducing a potential in accordance with the data in a bit line BL is applied to the ferroelectric capacitor CFe.