CAPACITOR OF MEMORY SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A capacitor of a memory semiconductor device is provided to prevent a bottom mold pattern from being etched during eliminating process of a top mold pattern and have a bottom electrode supported safely by the bottom mold pattern. CONSTITUTION: An interlayer dielectric(100) and etch stopping layer(110) are formed in turn on a semiconductor substrate. A contact plug(120) is formed through the resultant structure. A bottom mold pattern(135) and etch stopping pattern(145) are formed on the etch stopping layer, exposing the contact plug. The bottom electrode covers the top surface of the contact plug and the sidewall of the exposed opening of the bottom mold pattern and etch stopping pattern, having cylindrical shape with a bending part on the edge of the etch stopping pattern.