| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitance element, a manufacturing method therefor, a semiconductor device and a manufacturing method therefor which easily process a ferroelectric film and suppresses voids from being formed in an insulation film to improve the coverage of the film on the capacitance element. SOLUTION: The capacitance element manufacturing method comprises a step of forming a lower side electrode 10 on an element isolation film 2, step of forming a first layer insulation film 9 on the lower side electrode, step of forming trenches 9a, 9b on the lower side electrode in the layer insulation film 9, step of depositing a ferroelectric film 11 in the trenches and on the first layer insulation film 9, step of depositing a conductive film 12 on the ferroelectric film and in the trenches, and step of chemically and mechanically polishing the conductive film 12, the ferroelectric film 11 and the first layer insulation film 9 to embed ferroelectric films 11a, 11b and upper side electrodes 12a, 12b in the trenches.
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