| 摘要 |
PURPOSE: A light emitting device is provided to be capable of reducing oxygen concentration to a predetermined value, or less. CONSTITUTION: A light emitting device(1200) is provided with the first insulating layer(1205) containing nitride silicon or oxide nitride silicon, a semiconductor layer formed at the upper portion of the first insulating layer, a gate isolating layer formed on the semiconductor layer, a gate electrode formed on the gate isolating layer, the second insulating layer(1206) formed at the upper portion of the gate electrode and the third insulating layer(1207) formed at the upper portion of the second insulating layer. At this time, the third insulating layer contains inorganic insulating material selected from a group consisting of nitride silicon, oxide nitride silicon, oxide nitride aluminium, oxide aluminium, and nitride aluminium. The light emitting device further includes an isolating wall layer(1209) formed at the upper portion of the third insulating layer, the fourth insulating layer(1208) formed at the upper portion of the resultant structure, and a light emitting layer containing organic compound, enclosed by the third and fourth insulating layer, and the isolating wall layer. |
