| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent corrosion of a metal layer and metal blister in a wire layer by gassing out residual chemical solvent and water after a cleaning process following CMP. CONSTITUTION: A bottom barrier metal(21,22), a metal layer(23) and a top barrier metal(24) are deposited sequentially on an insulation layer(20) and patterned to form a metal wire layer, which is sintered. An underlying layer(25) is formed to fill up the gap between the metal wire layers. An interlayer dielectric(26) is formed to cover the underlying layer as a planarization layer. The underlying layer and interlayer dielectric are etched to form a via hole. Barrier metals(28,29) are deposited on the resultant structure. A metal layer(30) is deposited to fill up the vacant in the via hole. The metal layer and barrier metals are eliminated by a CMP process. The particles occurring during the CMP process are removed by a cleaning process, after which water and chemical solvent are gassing out.
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