MAGNETIC RANDOM ACCESS MEMORY

摘要

PURPOSE: A magnetic random access memory(MRAM) is provided to highly integrate a device by connecting one diode with a plurality of resistance varying elements wherein at least two resistance varying elements are connected in series or in parallel to store more bits in one cell. CONSTITUTION: A wordline(133) is formed on a semiconductor substrate(131). A diode(135) composed of n-type/p-type impurity layers is patterned on the wordline. A connection layer(139) is connected to the diode. A resistance varying element-bitline connection pair is composed of the first resistance varying element coupled to the connection layer and the first bitline(145) coupled to the first resistance varying element formed on the connection layer. The connection pair is vertically formed at least two times and is vertical to each adjacent bitline.