APPARATUS AND METHOD FOR CONTROLLING DIAMETER OF INGOT IN SINGLE CRYSTALLINE INGOT GROWER

摘要

PURPOSE: An apparatus and a method for controlling diameter of ingot in single crystalline ingot grower are provided to grow a single crystalline ingot to a desired diameter by accurately measuring diameter of the single crystalline ingot. CONSTITUTION: The apparatus comprises meniscus temperature sensing means for simultaneously sensing temperature of two points of the meniscus that is an interfacial surface between polysilicon solution of quartz crucible (10) and single crystalline ingot (12) being growing; an ingot diameter detection means for detecting actual diameter of the single crystalline ingot by comparing average value of the temperature of the two points on the meniscus sensed by the meniscus temperature sensing means with a reference temperature value according to target diameter of the silicon ingot; a pull up driving means (150) for increasing or decreasing pull up speed of the silicon ingot by the actual diameter of the single crystalline ingot (12) detected in the ingot diameter detection means; and a heating means for increasing or decreasing temperature of the polysilicon solution according to increase or decrease of the pull up speed of the silicon ingot by the pull up driving means, wherein the meniscus temperature sensing means are first and second diameter sensing sensors (140a,140b) symmetrically formed on the same line, and the ingot diameter detection means comprises an input part (130) comprising an operation selecting part (132), and a controller (120).