发明名称 METHOD FOR REDUCING RESISTIVITY OF ELECTROLESS-PLATED COPPER FILM
摘要 PURPOSE: An electroless copper plating method capable of forming metallization having a low resistivity is provided to form metallization having superior quality by reducing resistivity of electroless-plated copper film. CONSTITUTION: The method for reducing resistivity of electroless-plated copper film comprises the steps of preparing an object to be treated having a copper film formed by electroless plating; and performing posttreatment on the object to be treated to reduce copper oxides contained in the copper film into copper, wherein the posttreatment step comprises the steps of dipping the electrodes into a solution of alkali hydroxide by designating the electroless plated copper film as a processing electrode(122), SCE (saturated calomel electrode) as reference electrode(120), and platinum electrode(124) as relative electrode respectively; and applying a certain voltage for the reference electrode to the processing electrode, and wherein the solution of alkali hydroxide is a solution of potassium hydroxide(110).
申请公布号 KR20030034339(A) 申请公布日期 2003.05.09
申请号 KR20010065049 申请日期 2001.10.22
申请人 LG.PHILIPS LCD CO., LTD. 发明人 CHA, SEUNG HWAN;KIM, JAE JEONG;KIM, SU GIL
分类号 C23C18/16;(IPC1-7):C23C18/16 主分类号 C23C18/16
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