| 摘要 |
A nonvolatile semiconductor memory device has a memory cell with a floating gate. The memory cell is coupled to a switching circuit such as an inverter. A series of pulses supplied to the inverter generates current spikes by alternately charging and discharging a parasitic capacitance associated with the memory cell. The current spikes are supplied from the switching circuit to the memory cell, where they inject electrons into the floating gate, thereby writing data in the memory cell without the need for a high current flow or for complex control circuitry.
|
