| 摘要 |
The present invention relates to a crystalline silicon TFT panel for LCD and a method of fabricating the same. According to the present invention, an addressing TFT, a pixel driving TFT and a storage capacitor, which include a crystalline silicon thin film, are formed at a pixel region of the TFT panel using MILC, and a driving transistor is also formed at a peripheral region of the TFT panel. Furthermore, two or more gate electrodes are formed at the addressing TFT for supplying current to the storage capacitor so as to effectively lower an off current of the addressing TFT. Thus, the present invention has an advantage in that semiconductor devices required in the pixel region and the peripheral region of the TFT panel for OLED can be simultaneously fabricated through a relatively simple process, and thus, an off current characteristic and an on current characteristic that are required in the pixel region and the peripheral region, respectively, can be simultaneously satisfied.
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