发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor substrate, a silicon oxide layer formed on the semiconductor substrate, a gate electrode formed over the silicon oxide layer, and a side wall structure formed over the silicon oxide layer and adjacent the gate electrode. In one configuration, the thickness of the silicon oxide layer under the sidewall structure is thicker than the thickness of the silicon oxide layer under the gate electrode.
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申请公布号 |
US2003085434(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20020320660 |
申请日期 |
2002.12.17 |
申请人 |
YOSHIDA MASAHIRO;TOKITOH SHUNICHI |
发明人 |
YOSHIDA MASAHIRO;TOKITOH SHUNICHI |
分类号 |
H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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