| 摘要 |
The invention concerns a method for drying flat objects, such as data storage media in the form of wafers or their half-finished products, and in particular gallium or silicon slices or like substrates, in a treatment chamber (30, 61) capable of being locked, wherein is housed a support (12) receiving the substrate(s) (10). According to the invention, the substrates (10) are dipped in a bath (20) and displaced in a zone of spraying nozzles (50, 51, 52). The invention is characterized in that the slice(s) (10) or the like are dipped in a bath (20) consisting of a high-purity treatment liquid as separation medium (Q) and specific light water, a transverse current being generated by means of a separation medium at the bath surface (21), wherefrom the residual moisture is extracted. Additionally, the treatment liquid or separation medium (Q) is cooled at room temperature, the temperature of the slice (10) or the like is maintained at a higher level than the ambient temperature, in particular about 5 DEG C above room temperature.
|
