发明名称 METHOD FOR PRODUCING RUTILE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a rutile (TiO2 ) single crystal free from subgrains or small tilt grain boundaries, by growing the rutile single crystal within high pressure oxygen of 0.3 MPa or more by a floating zone (FZ) method using an infrared-concentrated oven. SOLUTION: The method for producing the rutile single crystal is characterized by that the rutile single crystal free from the subgrains and small tilt grain boundaries can be obtained, by growing the rutile (TiO2 ) single crystal within the high pressure oxygen of 0.3 MPa or more oxygen pressure by the floating zone (FZ) method using the infrared-concentrated oven.
申请公布号 JP2003128495(A) 申请公布日期 2003.05.08
申请号 JP20010323367 申请日期 2001.10.22
申请人 TANAKA ISAO;SHIM KWANG BO 发明人 TANAKA ISAO;WATAUCHI TOSHIJI;WAKIHARA MASATO;SHIM KWANG BO;PARK JON KUWAN;OU KUN HO
分类号 G02B1/02;C30B13/24;C30B29/16;(IPC1-7):C30B29/16 主分类号 G02B1/02
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