| 发明名称 |
Method of manufacturing a semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a silicon substrate; forming a contact hole on the insulating layer; forming a nitride layer on the side of the contact hole; and forming a selective conductive plug in the contact hole including the nitride layer.
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| 申请公布号 |
US2003087512(A1) |
申请公布日期 |
2003.05.08 |
| 申请号 |
US20010034228 |
申请日期 |
2001.12.28 |
| 申请人 |
CHEONG WOO SEOCK |
发明人 |
CHEONG WOO SEOCK |
| 分类号 |
H01L21/28;H01L21/205;H01L21/285;H01L21/302;H01L21/306;H01L21/3065;H01L21/316;H01L21/3205;H01L21/60;H01L21/768;H01L21/8234;H01L23/52;H01L27/088;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
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