| 摘要 |
A semiconductor component performing interface functions between the controller and the power components of a power inverter, is designed for the control of semiconductor components, in particular for the control of IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) power switches in different circuit topologies for intermediate and high power capacity. The component carries a monolithically integrated circuit performing the functions of signal processing (12), level transformation (13, 14), gate driver amplification, generation and monitoring of operating voltages, short-circuit monitoring by means of collector-emitter voltage detection, as well as the processing, storing and transmission of error signals for a power semiconductor switch.
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