MOSFET mit Temperaturschutz,申请号DE19975009662-传众专利搜索

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发明名称	MOSFET mit Temperaturschutz
摘要
申请公布号	DE59709662(D1)	申请公布日期	2003.05.08
申请号	DE19975009662	申请日期	1997.05.16
申请人	INFINEON TECHNOLOGIES AG	发明人	TIHANYI, JENOE DR. ING.
分类号	H01L27/02;(IPC1-7):H01L27/02	主分类号	H01L27/02
代理机构		代理人
主权项
地址

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