| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating process for applying a copper film, or the like, onto a semiconductor wafer, or the like, which well embeds a concave part on a substrate, improves the film-forming speed and inhibits void generation and surface roughness in the plated film. SOLUTION: The electroplating apparatus 100 comprises a semiconductor wafer W forming the bottom of a solution tank 12 with its film-formation target surface Wa facing up, plating solution-feeding systems 51 and 52 connected to the solution tank 12 for feeding plating solutions 22 and 23 and a copper plate 14 facing the semiconductor wafer W. In this apparatus 100, first, the plating solution 22 containing a promoter and an inhibitor is fed to the solution tank 12 to perform bottom-up filling inside a hole H formed on the film-formation target surface Wa. Subsequently, a field insulating film is formed on the hole H at a state wherein the plating current is increased by the leveller- containing plating solution 23.
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