TEMPERATURE MEASURING METHOD, HEAT TREATING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A heat treating method, wherein, when the radiation rate ϵ of the rear surface of a substrate (10) is measured in the heat treating process for the substrate (10), the films formed with the materials varying the radiation rate ϵ, for example, a first DPS film (15) forming a plug (15A), a second DPS film (17) for forming a capacity lower electrode (17A), and a third DPS film (20) for forming a capacity upper part electrode (20A) are formed on the surface of the substrate (10) and, on the rear surface of the substrate (10), any film formed with the material varying the radiation rate ϵ such as the DPS film is not formed.