| 摘要 |
PROBLEM TO BE SOLVED: To obtain a good polishing efficiency by washing a polishing pad at the position of the maximum wash water injection pressure to remove polished swarf from the polishing pad effectively. SOLUTION: The distance between the lower end face of a water jet nozzle housing 19 and the polishing pad 2 is set in such a manner that the stunt-off value becomes 30 or 150. At this position the cavitation phenomenon of water jet 44 on the polishing pad 2 becomes most active, and the removal efficiency of aggregate of polished swarf, slurry-like abrasive on the polishing pad 2 becomes the maximum. The polished swarf and the aggregate adhering on the polishing pad 2 are finely crushed by the water jet 44 and removed out of the polishing pad 2 by centrifugal force by rotating a surface plate 1 at a high-speed. Then, after conditioning by a pad conditioner 4 is performed, a semiconductor wafer is placed on the polishing pad 2 and subjected to a CMP treatment by using a polishing head 5. |
