| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a fault-analyzing method of a semiconductor device for analyzing the disconnection failure in metal wiring, gate wiring, and the like in the semiconductor device using an FIB apparatus. SOLUTION: In the fault-analyzing method of a semiconductor device, gallium ions are discharged to the wiring of an LSI chip (sample) 20 by an FIB apparatus when analyzing the disconnection failure in metal wiring, gate wiring, and the like in the semiconductor device, and the images of secondary electrons that are discharged from the sample 20 are observed, and wiring that is displayed in black as compared with other regions is detected as disconnection failure.</p> |
