发明名称 |
RUTHENIUM COMPLEX, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING THIN FILM |
摘要 |
A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentadienyl) ruthenium: or an organometallic ruthenium compound represented by the general formula (7), specific example of which is carbonylbis(2-methyl-1,3-pentadiene) ruthenium: as the precursor.
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申请公布号 |
US2003088116(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20020236914 |
申请日期 |
2002.09.09 |
申请人 |
TOSOH CORPORATION |
发明人 |
KAWANO KAZUHISA;SEKIMOTO KENICHI;OSHIMA NORIAKI;SHIBUTAMI TETSUO;KUMAGAI SHUJI;FURUKAWA TAISHI |
分类号 |
C23C16/18;C07F17/02;(IPC1-7):C07F17/02 |
主分类号 |
C23C16/18 |
代理机构 |
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主权项 |
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