| 发明名称 |
Method of forming reliable Cu interconnects |
| 摘要 |
Reliable Cu interconnects are formed by filling an opening in a dielectric layer with Cu and then laser thermal annealing in NH3 to reduce copper oxide and to reflow the deposited Cu, thereby eliminating voids and reducing contact resistance. Embodiments include laser thermal annealing employing an NH3 flow rate of about 200 to about 2,000 sccn.
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| 申请公布号 |
US2003087522(A1) |
申请公布日期 |
2003.05.08 |
| 申请号 |
US20010986267 |
申请日期 |
2001.11.08 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH VAN;HALLIYAL ARVIND;PATON ERIC |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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| 主权项 |
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