发明名称 |
Resonator frequency correction by modifying support structures |
摘要 |
A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.
|
申请公布号 |
US2003085779(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20020307053 |
申请日期 |
2002.11.27 |
申请人 |
MA QING;CHENG PENG;RAO VALLURI R. |
发明人 |
MA QING;CHENG PENG;RAO VALLURI R. |
分类号 |
H03H3/007;H03H9/24;(IPC1-7):H03H9/54 |
主分类号 |
H03H3/007 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|