发明名称 Resonator frequency correction by modifying support structures
摘要 A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.
申请公布号 US2003085779(A1) 申请公布日期 2003.05.08
申请号 US20020307053 申请日期 2002.11.27
申请人 MA QING;CHENG PENG;RAO VALLURI R. 发明人 MA QING;CHENG PENG;RAO VALLURI R.
分类号 H03H3/007;H03H9/24;(IPC1-7):H03H9/54 主分类号 H03H3/007
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