HIGH FREQUENCY SIGNAL ISOLATION IN A SEMICONDUCTOR DEVICE

摘要

A semiconductor device (20) includes an isolated p-well (22) formed in a substrate (21) by a buried n-well (25) and an n-well ring (24). The n-well ring (24) extends from a surface of the semiconductor device (20) to the buried n-well (25). The isolated p-well (22) includes a plurality of n-well plugs (27) extending from the surface of the semiconductor device (20) into the isolated p-well (22) and contacting the buried n-well (25). The plurality of n-well plugs (27) reduces an n-well resistance to provide better noise isolation for high frequency signals.