发明名称 |
Hard mask removal process |
摘要 |
A method for removing a hard mask during a semiconductor fabrication process is disclosed in which a hard mask material is used to pattern a first material. The method includes a two-step removal process that includes performing a major wet etch to remove a majority of the hard mask material, followed by performing a minor dry etch that removes a remainder of the hard mask material.
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申请公布号 |
US2003087529(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20010039361 |
申请日期 |
2001.11.07 |
申请人 |
WU YIDER;GHANDEHARI KOUROS;HUI ANGELA;SHIELDS JEFFREY A.;CHANG KUO-TUNG |
发明人 |
WU YIDER;GHANDEHARI KOUROS;HUI ANGELA;SHIELDS JEFFREY A.;CHANG KUO-TUNG |
分类号 |
H01L21/28;H01L21/311;H01L21/3213;H01L21/8246;(IPC1-7):H01L21/461;C03C25/68 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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