发明名称 |
SHALLOW-ANGLE INTERFERENCE PROCESS AND APPARATUS FOR DETERMINING REAL-TIME ETCHING RATE |
摘要 |
A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing. |
申请公布号 |
WO03007327(A3) |
申请公布日期 |
2003.05.08 |
申请号 |
WO2002US23234 |
申请日期 |
2002.07.12 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
CARDOSO, ANDRE;JANOS, ALAN |
分类号 |
H01L21/3065;H01J37/32 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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