发明名称 STRUCTURE OF THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY DEVICE CONTAINING CONDUCTIVE PARTICLE, AND MANUFACTURING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a cost-saving and simpler manufacturing process for a thin film transistor liquid crystal display device which is increased in intensity of scattering of the light perpendicular to a screen by forming a resin layer. SOLUTION: This invention relates to the structure of the thin film transistor liquid crystal display device containing conductive particles and the manufacturing method therefor, especially, relates to a reflective or semi-transmissive thin film transistor liquid crystal display device and a manufacturing method therefor. The manufacturing method comprises (a) a step for preparing an insulating substrate, (b) a step for forming a thin film transistor structure and a transparent electrode structure on the insulating substrate, and connecting the transparent electrode structure with the source/drain ends of the thin film transistor structure, and (c) a step for forming a thin film structure containing a plurality of conductive particles on the transparent electrode structure.</p>
申请公布号 JP2003131262(A) 申请公布日期 2003.05.08
申请号 JP20020226183 申请日期 2002.08.02
申请人 GENTA KAGI KOGYO KOFUN YUGENKOSHI 发明人 LIN WEN-JIAN;TSAI HSIUNG-KUANG;HO SHOU-CHUAN
分类号 G02F1/1368;G02F1/1335;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/1368
代理机构 代理人
主权项
地址