发明名称 METHOD FOR PRODUCING AND APPARATUS FOR PRODUCING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for producing a single crystal having a cross sectional shape similiar to that of the desired wafer. SOLUTION: The apparatus 10 for producing the single crystal is the single crystal producing apparatus by Czochralski method. Reflecting plate 30 is partially disposed over the single crystal and in the peripheral direction of a single crystal pull up axis 22 and at the position where the heat radiation from the single crystal is inhibited to rotate synchronously with the single crystal.
申请公布号 JP2003128496(A) 申请公布日期 2003.05.08
申请号 JP20010324487 申请日期 2001.10.23
申请人 MURATA MFG CO LTD 发明人 SATO HIDETO
分类号 C30B29/34;C30B15/14;(IPC1-7):C30B29/34 主分类号 C30B29/34
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