| 摘要 |
A mask is fabricated by applying a sacrificial layer on a semiconductor wafer. The sacrificial layer is then processed with the aid of a first and a second lithographic process sequence in order to pattern the sacrificial layer in a first and a second direction. A hard mask layer is subsequently applied in order to completely enclose the patterned sacrificial layer. Finally, the sacrificial layer is then removed from the hard mask layer.
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