发明名称 PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an Sn-plating process that inhibits whisker generation, which meets the requirement of Pb-removal from Sn-Pb solders conventionally used for external plating of semiconductors in view of environmental issues and solves the problem associated with the use of Pb-free and Sn-only solders, where reliability cannot be retained due to short circuit caused by whisker development during use. SOLUTION: In Sn-solder plating, the final plating process is performed with an alternating current of at least 10 Hz, especially >=100 Hz, while controlling the minimum current at <=0.
申请公布号 JP2003129276(A) 申请公布日期 2003.05.08
申请号 JP20010353882 申请日期 2001.10.16
申请人 ONO TAKAHIDE 发明人 ONO TAKAHIDE;MATSUFUJI KENGO;YASUDA KEIICHIRO;SHINOZAKI MIZUHO
分类号 C25D5/18;C25D7/12;C25D21/12;H01L23/50;(IPC1-7):C25D5/18 主分类号 C25D5/18
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