| 发明名称 |
Semiconductor device having fuse circuit on cell region and method of fabricating the same |
| 摘要 |
A semiconductor device, capable of improving integration density and solving problems that may occur in a laser repair process, and a method of fabricating the same are provided. A fuse circuit is formed in a cell region, not in a peripheral region, and thus it is possible to reduce the size of a semiconductor chip.
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| 申请公布号 |
US2003085446(A1) |
申请公布日期 |
2003.05.08 |
| 申请号 |
US20020269202 |
申请日期 |
2002.10.10 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG YOUNG-HEE;CHOI ILL-HEUNG;SON MIN-YOUNG;PARK MIN-SANG |
| 分类号 |
H01L21/3205;H01L21/60;H01L21/82;H01L23/52;H01L23/525;H01L27/02;H01L27/10;H01L27/108;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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