| 摘要 |
<p>A field effect transistor has source (12), body (10) and drain (8) formed on an insulating layer (4).Highly doped regions (40) of same conductivity type as that of the body (10) are formed under the source (12), laterally aligned with the source (12) by implantation through opening in the source mask. The ruggedness of the transistor may thereby be improved without affecting the doping in channel region (19).</p> |
