PRODUCTION METHOD FOR SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A production method for a semiconductor light emitting element comprising the step of growing a first nitride-based III-V compound semiconductor layer 22 on the principal surface of a substrate 21, the step of forming, repeatedly at a specified cycle and in a width direction, stripe-shaped masking films 23 each having a first width portion and a second width portion different in width on the first nitride-based III-V compound semiconductor layer, the step of selectively growing a second nitride-based III-V compound semiconductor layer 25 from the portions, exposed between the masking films, of the surface of the first nitride-based III-V compound semiconductor layer so as to cover the masking films and those exposed portions, and the step of laminating on the second nitride-based III-V compound semiconductor layer semiconductor laser structures 26-33 including active layers practically extending in the extending direction of the masking films to thereby obtain, at portions on the boundaries between the first width portions stripe 1 and the second width portions stripe 2 of the masking films, a semiconductor laser structure having laminate step differences 301 according to the width differences between the first and second width portions.