发明名称 |
Oxygen-doped silicon carbide etch stop layer |
摘要 |
A low-k (k<4.2) oxygen-doped SiC layer acts as an etch stop layer for dual-damascene applications. A dual-damascene structure includes: a base layer; a first dielectric layer formed on the base layer; an oxygen-doped silicon carbide etch stop layer formed on the first dielectric layer; and a second dielectric layer formed on the etch stop layer. The second dielectric layer is deposited by using a chemical vapor deposition (CVD) method. The novel oxygen-doped etch stop layer presents a lower dielectric constant (k~4.1), better mechanical properties, and improved electrical properties.
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申请公布号 |
US2003085408(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20010682940 |
申请日期 |
2001.11.02 |
申请人 |
YANG NENG-HUI;TSAI CHENG-YUAN;WU HSIN-CHANG |
发明人 |
YANG NENG-HUI;TSAI CHENG-YUAN;WU HSIN-CHANG |
分类号 |
C23C16/30;H01L21/316;H01L21/768;H01L31/0312;H01L33/00;(IPC1-7):H01L31/031 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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